Effect of modulations of doping and strain on the electron transport in monolayer MoS_2

摘要

The doping and strain effects on the electron transport of monolayer MoS_2are systematically investigated using the first-principles calculations withBoltzmann transport theory. We estimate the mobility has a maximum 275cm^2/(Vs) in the low doping level under the strain-free condition. The applyinga small strain (3%) can improve the maximum mobility to 1150 cm^2/(Vs) and thestrain effect is more significant in the high doping level. We demonstrate thatthe electric resistance mainly due to the electron transition between K and Qvalleys scattered by the M momentum phonons. However, the strain caneffectively suppress this type of electron-phonon coupling by changing theenergy difference between the K and Q valleys. This sensitivity of mobility tothe external strain may direct the improving electron transport of MoS_2.